Anson Mei has launched the latest generation of the T10 PowerTrench® series and EliteSiC 650V MOSFET combination solution, which helps data centers reduce power loss by about 1%. It is reported that the T10 PowerTrench series is designed for high current levels that are critical to DC-DC power conversion, providing higher power density and excellent thermal performance through compact packaging dimensions; the new generation of silicon carbide (SiC) MOSFETs reduce gate charge in half, and reduce the energy stored in output capacitors and output charges by 44%. This combination solution complies with the strict Open Rack V3 (ORV3) specifications required by hyperscale operators and supports next-generation high-power processors.
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Anson Mei has launched the latest generation of the T10 PowerTrench® series and EliteSiC 650V MOSFET combination solution, which helps data centers reduce power loss by about 1%. It is reported that the T10 PowerTrench series is designed for high current levels that are critical to DC-DC power conversion, providing higher power density and excellent thermal performance through compact packaging dimensions; the new generation of silicon carbide (SiC) MOSFETs reduce gate charge in half, and reduce the energy stored in output capacitors and output charges by 44%. This combination solution complies with the strict Open Rack V3 (ORV3) specifications required by hyperscale operators and supports next-generation high-power processors.